npn: v ceo = 60v, i c = 1a, vce (sat) = 0.5v @1a description: this 60v npn transistor provides users with performance combining low saturation and high h fe with a continuous current capability of 1a, ensuring improved circuit efficiencies. features low saturation voltage high h fe min 300 @ 250ma i c = 1a applications various driving functions including:- - motors - actuators - soleniod & relays backlight inverters. dc_dc modules. FMMT493A issue 2 - august 2003 1 semiconductors sot23 60v npn silicon planar medium power planar transistor c b e sot23 device reel size tape width quantity (inches) (mm) per reel FMMT493Ata 7 8mm embossed 3000 units FMMT493Atc 13 8mm embossed 10000 units c e b top view
semiconductors FMMT493A issue 2 - august 2003 2 parameter symbol min. max. unit conditions. collector - base breakdown voltage v (br)cbo 120 v i c = 100 a collector - emitter breakdown voltage v ceo(sus) 60 v i c = 10ma* emitter - base breakdown voltage v (br)ebo 5v i e = 100 a collector cut-off current i cbo 100 na v cb = 45v collector cut-off current i ces 100 na v ces = 45v emitter cut-off current i ebo 100 na v eb =4v collector - emitter saturation voltage v ce(sat) 0.25 0.5 v v i c = 500ma, i b = 50ma i c = 1a, i b = 100ma base - emitter saturation voltage v be(sat) 1.15 v i c =1a, i b = 100ma base emitter turn on voltage v be(on) 1.0 v i c = 1a, v ce - 10v static forward current transfer ratio h fe 300 500 300 100 20 1200 i c =1ma,v ce = 10v i c = 150ma, v ce = 10v i c = 250ma, v ce = 10v i c = 500ma, v ce = 10v i c = 1a, v ce = 10v transition frequency f t 150 mhz i c = 50ma, v ce = 10v f = 100mhz output capacitance c obo 10 pf v cb = 10v, f = 1mhz electrical characteristics (at tamb = 25 c). *measured under pulsed conditions. pulse width = 300 s. duty cycle <2%
FMMT493A issue 2 - august 2003 3 semiconductors 1m 10m 100m 1 1 0m 100m 1m 10m 100m 1 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1m 10m 100m 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 0 200 400 600 800 1000 1200 1400 v ce(sat) vi c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) vi c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe vi c v ce =10v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) vi c i c /i b =50 100c -55c v be ( sat ) (v) i c collector current (a) v be(on) vi c v ce =10v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe ) electrical characterics
semiconductors FMMT493A issue 2 - august 2003 4 parameter symbol v alue unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5v continuous collector current i c 1a peak pulse current i cm 2a base current i b 200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings. parameter symbol value unit junction to ambient (a) r ja 250 c/w mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire. thermal resistance
FMMT493A issue 2 - august 2003 5 semiconductors 100m 1 10 100 10m 100m 1 single pulse t amb =25c 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 250 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) thermal characteristics
issue 2 - august 2003 semiconductors 6 FMMT493A europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 n package dimensions pad layout details dim millimetres inches min max min max a 2.67 3.05 0.105 0.120 b 1.20 1.40 0.047 0.055 c ? 1.10 ? 0.043 d 0.37 0.53 0.0145 0.021 f 0.085 0.15 0.0033 0.0059 g nom 1.9 nom 0.075 k 0.01 0.10 0.0004 0.004 l 2.10 2.50 0.0825 0.0985 n nom 0.95 nom 0.037
|
